dmn62d1sfb document number: ds35252 rev. 3 - 2 1 of 6 www.diodes.com april 2014 ? diodes incorporated advance information dmn62d1sfb 60v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max @ t a = +25c 60v 1.4 ? @ v gs = 10v 0.41a 1.6 ? @ v gs = 4.5v 0.38a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? load switch ? portable applications ? power management functions features and benefits ? footprint of just 0.6mm 2 ? thirteen times smaller than sot23 ? low on-resistance ? low gate threshold voltage ? fast switching speed ? ultra-small surface mount package ? esd protected gate 200v ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel dmn62d1sfb-7b nh 7 8 10,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information x1-dfn1006-3 equivalent circuit top view internal schematic bottom view nh = product type marking code dmn62d1sfb-7b top view bar denotes gate and source side nh source body diode gate protection diode gate drain d s g e4
dmn62d1sfb document number: ds35252 rev. 3 - 2 2 of 6 www.diodes.com april 2014 ? diodes incorporated advance information dmn62d1sfb maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v t a = +25c t a = +85c i d 0.41 0.30 a pulsed drain current (note 6) i dm 2.64 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 0.47 w thermal resistance, junction to ambient @t a =+25c r ja 258 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 60 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss ? ? 100 na v ds = 60v, v gs = 0v gate-source leakage i gss ? ? 10 1 a v gs = 20v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 1.3 1.6 2.3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? ? 1.40 ? v gs = 10v, i d = 40ma 1.60 v gs = 4.5v, i d = 35ma forward transfer admittance |y fs | 100 ? ? ms v ds = 5v, i d = 40ma diode forward voltage v sd ? 0.7 1.1 v v gs = 0v, i s = 300ma dynamic characteristics (note 8) input capacitance c iss ? 40 80 pf v ds = 40v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 3.5 7 pf reverse transfer capacitance c rss ? 2.8 5.6 pf gate resistance r g ? 81.3 200 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g ? 0.73 1.5 nc v gs = 4.5v v ds = 50v, i d = 1a total gate charge q g ? 1.39 2.8 nc v gs = 10v gate-source charge q gs ? 0.2 0.4 nc gate-drain charge q gd ? 0.23 0.5 nc turn-on delay time t d(on) ? 3.89 10 ns v ds = 50v, i d = 1a v gs = 10v, r g = 6 ? turn-on rise time t r ? 4.93 10 ns turn-off delay time t d(off) ? 18.80 40 ns turn-off fall time t f ? 11.96 25 ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
dmn62d1sfb document number: ds35252 rev. 3 - 2 3 of 6 www.diodes.com april 2014 ? diodes incorporated advance information dmn62d1sfb 0 0.2 0.4 0.6 0.8 1.0 01 2 345 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 5.0v gs v = 10v gs 0 0.2 0.4 0.6 0.8 1.0 i , drain current (a) d fig. 2 typical on-resistance vs. drain current and temperature 0.1 1 10 r , drain-source on-resistance ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v gs 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 i , drain current (a) d fig. 3 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 4 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson ? v = 10v i = 150ma gs d v = 10v i = 300ma gs d 1.0 1.2 1.4 1.6 1.8 2.0 fig. 5 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d |y |, forward transfer admittance (s) fs 0 0.01 0.1 1 0.001 0.01 0.1 1 i , drain current (ma) fig. 6 forward transfer admittance vs. drain current d v = 10v ds t = 25c a t = -55c a t = 150c a t = 125c a t = 85c a
dmn62d1sfb document number: ds35252 rev. 3 - 2 4 of 6 www.diodes.com april 2014 ? diodes incorporated advance information dmn62d1sfb i , source current (a) s 0.001 0.01 0.1 1 0.1 0.3 0.5 0.7 0.9 1.1 v , source-drain voltage (v) fig. 7 diode forward voltage vs. current sd t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 1 2 3 4 5 6 7 048121620 i , drain-source current fig. 8 on-resistance vs. drain-source current d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? i = 150ma d i = 300ma d 0.001 0.01 0.1 1 01 23 45 fig. 9 typical transfer characteristic v , gate-source voltage (v) gs i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v ds 0 4 8 1216 202428323640 1 10 1,000 c , c a p a c i t an c e (p f ) 100 fig. 10 typical total capacitance v , drain-source voltage (v) ds c iss c rss c oss f = 1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2 4 6 10 v, g a t e-s o u r c e v o l t a g e (v) gs 8 fig. 11 gate-charge characteristics q , total gate charge (nc) g v = 50v i = 1.0a ds d
dmn62d1sfb document number: ds35252 rev. 3 - 2 5 of 6 www.diodes.com april 2014 ? diodes incorporated advance information dmn62d1sfb package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com /datasheets/ap02001.pdf for latest version. 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.000001 0.0001 0.00001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 ? r (t) = r(t) * ? ja r r = 249c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 x1-dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ?? ?? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ?? ?? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
dmn62d1sfb document number: ds35252 rev. 3 - 2 6 of 6 www.diodes.com april 2014 ? diodes incorporated advance information dmn62d1sfb important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
|
